SIMULATION EXPLORATION OF THE IMPACT OF InGaAsP MQW AND DBR PARAMETERS DESIGN FOR ENHANCEMENT VCSEL EMITTING LASER
DOI:
https://doi.org/10.18623/rvd.v23.4911Keywords:
VCSEL Laser, Hetero-Structure, Ingaasp MQW, DBR Mirror Period, Silvaco Atlas ToolAbstract
The aim of this paper focuses on a numerical model working implemented in Silvaco atlas software that provides keys results to simulate optical-electrical VCSEL device characteristics. The optimization approach used for enhancing VCSEL performance based on different structure design staggered InGaAsP MQW and high index DBR mirror period as well as coupled from each other at an optical telecommunication wavelength. Our finding results reveals firstly that the developed model shows a good agreement with data available in literature, and fully fitted VCSEL model behaviour. Secondly, the uses of staggered InGaAsP MQW design with right composition of indium, design optimized parameters, material properties; improve the capturing probability of injected carriers with a narrower well, which has the effect of increasing the gain and reducing the threshold current with high emission at 1.5μm wavelength. Further, the best choice of material parameter of upper and lower DBR mirror (refractive index, period number) allows an enhancement efficiency of VCSEL device. Optimized VCSEL shows that the absorption rate and the reflectivity have a crucial role for achieving the appropriate wavelength as well as that exhibits higher reflectivity around the central wavelength due to the best index contrast between DBR successive layers and reaching the emission threshold.
References
Chaqmaqchee, F. A. I. Optically and electrically pumped ga0.65in0.35n0.02as0.98/gaas vertical-cavity surface-emitting lasers (VCSELs) for 1.3 μm wavelength operation. Arabian journal for science and engineering, v. 39, p. 5785–5790, 2014. http://dx.org/10.1007/s13369-014-1126-3
Cheng, H. T.; Yang, Y. C.; Liu, T. H. Recent advances in 850 nm VCSELs for high-speed interconnects. Photonics, v. 9, p. 107–133, 2022. https://doi.org/10.3390/photonics9020107
Faez, R.; Marjani, A.; Marjani, S. Design and simulation of high power single mode 1550 nm Ingaasp VCSELs. Ieice electronics express, v. 8, p. 1096–1101, 2011. http://doi.org/10.1587/elex.8.1096
Keever, M. Avago technologies VCSEL design and integration. Iii-vs review the advanced semiconductor magazine, v. 19, p. 32–34, 2006. https://doi.org/10.1016/S0961-1290(06)71767-7
Khan, Z.; Chang, Y. H.; Pan, T. L.; Lee, C. H.; Shi, J. W. High-brightness, high-speed and low noise VCSEL arrays for optical wireless communication. Ieee access, v. 10, p. 2303–2317, 2021. http://doi.org/10.1109/ACCESS.2021.3133436
Nishida, T.; Takaya, M.; Kakinuma, S. 4.2-mw gainnas long-wavelength VCSEL grown by metalorganic chemical vapor deposition. Ieee journal of selected topics in quantum electronics, v. 11, p. 958–961, 2005. http://doi.org/10.1109/JSTQE.2005.853734
Piprek, J.; Mehta, M.; Jayaraman, V. Design and optimisation of high performance 1.3 µm VCSELs. Physics and simulation of optoelectronic devices xii, v. 5349, p. 375–384, 2004. http://doi.org/10.1117/12.543062
Safaisini, R.; Szczerba, K.; Haglund, E. 22 gb/s error-free data transmission beyond 1 km of multi-mode fiber using 850 nm VCSELs. Proceedings of spie, v. 8639, 2013. http://dx.doi.org/10.1117/12.2003693
Sarzala, R.; Czyszanowski, T.; Wasiak, M. Numerical self-consistent analysis of VCSELs. Advances in optical technologies, 2012. http://doi.org/10.1155/2012/689519
Uhlig, L.; Washus, M.; Kunzmann, D. J. Spectral-temporal dynamics of (Al,In)gan laser diodes. Optics express, v. 28, p. 1771–1789, 2020. https://doi.org/10.1364/OE.382257
Valle, A.; Gymez-Molina, M.; Pesquera, L. Polarisation bistability in 1550 nm wavelength single mode VCSEL subject to orthogonal optical injection. Ieee journal of selected topics in quantum electronics, v. 14, p. 895–902, 2008. http://doi.org/10.1109/JSTQE.2008.918044
Vurgaftman, I.; Meyer, J. R.; Ram-mohan, L. R. Band parameters for iii-v compound semiconductors and their alloys. Journal of applied physics, v. 89, p. 5815–5875, 2001. http://dx.doi.org/10.1063/1.1368156
Xu, L.; Patel, D.; Menoni, C. S. Carrier recombination dynamics investigations of strain-compensated Ingaasn quantum wells. Ieee photonics journal, v. 4, p. 2382–2389, 2012.
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